Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films

[Image: see text] Epitaxial thin films of HfO(2) doped with La have been grown on SrTiO(3)(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic...

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Autores principales: Song, Tingfeng, Tan, Huan, Bachelet, Romain, Saint-Girons, Guillaume, Fina, Ignasi, Sánchez, Florencio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8613842/
https://www.ncbi.nlm.nih.gov/pubmed/34841249
http://dx.doi.org/10.1021/acsaelm.1c00672
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author Song, Tingfeng
Tan, Huan
Bachelet, Romain
Saint-Girons, Guillaume
Fina, Ignasi
Sánchez, Florencio
author_facet Song, Tingfeng
Tan, Huan
Bachelet, Romain
Saint-Girons, Guillaume
Fina, Ignasi
Sánchez, Florencio
author_sort Song, Tingfeng
collection PubMed
description [Image: see text] Epitaxial thin films of HfO(2) doped with La have been grown on SrTiO(3)(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm(2). The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 10(10) cycles is obtained in 5 at. % La-doped films.
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spelling pubmed-86138422021-11-26 Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films Song, Tingfeng Tan, Huan Bachelet, Romain Saint-Girons, Guillaume Fina, Ignasi Sánchez, Florencio ACS Appl Electron Mater [Image: see text] Epitaxial thin films of HfO(2) doped with La have been grown on SrTiO(3)(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic and cubic phases and exhibit the highest polarization, having a remanent polarization above 20 μC/cm(2). The dopant concentration results in an important effect on the coercive field, which is reduced with increasing La content. Combined high polarization, high retention, and high endurance of at least 10(10) cycles is obtained in 5 at. % La-doped films. American Chemical Society 2021-10-19 2021-11-23 /pmc/articles/PMC8613842/ /pubmed/34841249 http://dx.doi.org/10.1021/acsaelm.1c00672 Text en © 2021 American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Song, Tingfeng
Tan, Huan
Bachelet, Romain
Saint-Girons, Guillaume
Fina, Ignasi
Sánchez, Florencio
Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
title Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
title_full Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
title_fullStr Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
title_full_unstemmed Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
title_short Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films
title_sort impact of la concentration on ferroelectricity of la-doped hfo(2) epitaxial thin films
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8613842/
https://www.ncbi.nlm.nih.gov/pubmed/34841249
http://dx.doi.org/10.1021/acsaelm.1c00672
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