Cargando…

Impact of La Concentration on Ferroelectricity of La-Doped HfO(2) Epitaxial Thin Films

[Image: see text] Epitaxial thin films of HfO(2) doped with La have been grown on SrTiO(3)(001) and Si(001), and the impact of the La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2–5 at. % La doping present the least amount of paraelectric monoclinic...

Descripción completa

Detalles Bibliográficos
Autores principales:	Song, Tingfeng, Tan, Huan, Bachelet, Romain, Saint-Girons, Guillaume, Fina, Ignasi, Sánchez, Florencio
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2021
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8613842/ https://www.ncbi.nlm.nih.gov/pubmed/34841249 http://dx.doi.org/10.1021/acsaelm.1c00672

Ejemplares similares

The demonstration of significant ferroelectricity in epitaxial Y-doped HfO(2) film
por: Shimizu, Takao, et al.
Publicado: (2016)

On the switching dynamics of epitaxial ferroelectric CeO(2)–HfO(2) thin film capacitors
por: Cüppers, Felix, et al.
Publicado: (2022)

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO(3) Thin Films on Si(001)
por: Lyu, Jike, et al.
Publicado: (2018)

Enhanced ferroelectric switching speed of Si-doped HfO(2) thin film tailored by oxygen deficiency
por: Lee, Kyoungjun, et al.
Publicado: (2021)

Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf(0.5)Zr(0.5)O(2) Tunnel Junctions
por: Long, Xiao, et al.
Publicado: (2023)

A Multi-level Memristor Based on Al-Doped HfO(2) Thin Film
por: Wu, Lei, et al.
Publicado: (2019)

Thermoelectric La-doped SrTiO(3) epitaxial layers with single-crystal quality: from nano to micrometers
por: Apreutesei, Mihai, et al.
Publicado: (2017)

Mesoscopic-scale grain formation in HfO(2)-based ferroelectric thin films and its impact on electrical characteristics
por: Kobayashi, Masaharu, et al.
Publicado: (2022)

Improved remnant polarization of Zr-doped HfO(2) ferroelectric film by CF(4)/O(2) plasma passivation
por: Choi, Yejoo, et al.
Publicado: (2022)

Graphene/Ferroelectric (Ge-Doped HfO(2)) Adaptable Transistors Acting as Reconfigurable Logic Gates
por: Dragoman, Mircea, et al.
Publicado: (2022)

Interface-engineered ferroelectricity of epitaxial Hf(0.5)Zr(0.5)O(2) thin films
por: Shi, Shu, et al.
Publicado: (2023)

Tunable Microwave Filters Using HfO(2)-Based Ferroelectrics
por: Aldrigo, Martino, et al.
Publicado: (2020)

Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO(2) Film
por: Peng, Yue, et al.
Publicado: (2022)

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO(2)-based ferroelectric thin film
por: Cheng, Yan, et al.
Publicado: (2022)

Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO(2) Films
por: Jang, Chan-Hee, et al.
Publicado: (2022)

Effect of Ag Concentration Dispersed in HfO(x) Thin Films on Threshold Switching
por: Jeong, Won Hee, et al.
Publicado: (2020)

Effects of Oxygen Flow during Fabrication by Magnetron Sputtering on Structure and Performance of Zr-Doped HfO(2) Thin Films
por: Xi, Yingxue, et al.
Publicado: (2023)

Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers
por: Moalla, R., et al.
Publicado: (2018)

Direct Epitaxial Growth of Polar (1 – x)HfO(2)–(x)ZrO(2) Ultrathin Films on Silicon
por: Nukala, Pavan, et al.
Publicado: (2019)

Low-Frequency Noise Characteristics in HfO(2)-Based Metal-Ferroelectric-Metal Capacitors
por: Im, Ki-Sik, et al.
Publicado: (2022)

Publisher Correction: Large anisotropy of ferroelectric and pyroelectric properties in heteroepitaxial oxide layers
por: Moalla, R., et al.
Publicado: (2018)

Si-Doped HfO(2)-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
por: Lee, Yoseop, et al.
Publicado: (2022)

Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
por: Jiang, Ran, et al.
Publicado: (2017)

Humidity Sensing Properties of (In+Nb) Doped HfO(2) Ceramics
por: Yao, Jiahao, et al.
Publicado: (2023)

Enhancing Photoluminescence Intensity and Spectral Bandwidth of Hybrid Nanofiber/Thin-Film Multilayer Tm(3+)-Doped SiO(2)–HfO(2)
por: Zulfikri, Nurul Izzati Zafirah, et al.
Publicado: (2022)

Effects of Charge Trapping on Memory Characteristics for HfO(2)-Based Ferroelectric Field Effect Transistors
por: Wang, Jianjian, et al.
Publicado: (2023)

Resistive Switching Characteristics of HfO(2) Thin Films on Mica Substrates Prepared by Sol-Gel Process
por: Liu, Chao-Feng, et al.
Publicado: (2019)

All-Water-Driven High-k HfO(2) Gate Dielectrics and Applications in Thin Film Transistors
por: Alam, Fakhari, et al.
Publicado: (2023)

Crystallinity Effect on Electrical Properties of PEALD–HfO(2) Thin Films Prepared by Different Substrate Temperatures
por: Zhang, Xiao-Ying, et al.
Publicado: (2022)

THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO(2)
por: Abdulazhanov, Sukhrob, et al.
Publicado: (2022)

Uniformity of HfO(2) Thin Films Prepared on Trench Structures via Plasma-Enhanced Atomic Layer Deposition
por: Choi, Boyun, et al.
Publicado: (2022)

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO(2) Metal-Ferroelectric-Metal Memory
por: Chang, Ting-Yu, et al.
Publicado: (2023)

Possible ferroelectricity in perovskite oxynitride SrTaO(2)N epitaxial thin films
por: Oka, Daichi, et al.
Publicado: (2014)

Resistive switching of the HfO(x)/HfO(2) bilayer heterostructure and its transmission characteristics as a synapse
por: Tan, Tingting, et al.
Publicado: (2018)

Surface Passivation of Silicon Using HfO(2) Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
por: Zhang, Xiao-Ying, et al.
Publicado: (2017)

Al(2)O(3)/HfO(2) Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors
por: Shi, Qiuwei, et al.
Publicado: (2022)

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
por: Puźniak, Mirosław, et al.
Publicado: (2023)

Effect of Microwave Annealing on the Sensing Characteristics of HfO(2) Thin Film for High Sensitive pH-EGFET Sensor
por: Cui, Siwei, et al.
Publicado: (2023)

Influence of NF(3) Plasma-Treated HfO(2) Gate Insulator Surface on Tin Oxide Thin-Film Transistors
por: Avis, Christophe, et al.
Publicado: (2023)

Integration of lead-free ferroelectric on HfO(2)/Si (100) for high performance non-volatile memory applications
por: Kundu, Souvik, et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_rt2c8u0n3bcuon0288t6dg99dh