Simulating 50 keV X-ray Photon Detection in Silicon with a Down-Conversion Layer

Simulation results are presented that explore an innovative, new design for X-ray detection in the 20–50 keV range that is an alternative to traditional direct and indirect detection methods. Typical indirect detection using a scintillator must trade-off between absorption efficiency and spatial res...

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Detalles Bibliográficos
Autores principales: Anagnost, Kaitlin M., Lee, Eldred, Wang, Zhehui, Liu, Jifeng, Fossum, Eric R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618102/
https://www.ncbi.nlm.nih.gov/pubmed/34833642
http://dx.doi.org/10.3390/s21227566

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618102/
https://www.ncbi.nlm.nih.gov/pubmed/34833642
http://dx.doi.org/10.3390/s21227566

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