Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...

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Detalles Bibliográficos
Autores principales: Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Ke, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618193/
https://www.ncbi.nlm.nih.gov/pubmed/34832708
http://dx.doi.org/10.3390/mi12111296

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618193/
https://www.ncbi.nlm.nih.gov/pubmed/34832708
http://dx.doi.org/10.3390/mi12111296

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