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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic measurement system. Both static and dynamic characteristics were measured, analyzed with the consideration of acceptor/donor traps in the C-dope...

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Detalles Bibliográficos
Autores principales:	Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Ke, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618193/ https://www.ncbi.nlm.nih.gov/pubmed/34832708 http://dx.doi.org/10.3390/mi12111296

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