Effect of Point Defects on Electronic Structure of Monolayer GeS

Using density functional theory calculations, atomic and electronic structure of defects in monolayer GeS were investigated by focusing on the effects of vacancies and substitutional atoms. We chose group IV or chalcogen elements as substitutional ones, which substitute for Ge or S in GeS. It was fo...

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Detalles Bibliográficos
Autores principales: Choi, Hyeong-Kyu, Cha, Janghwan, Choi, Chang-Gyu, Kim, Junghwan, Hong, Suklyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618743/
https://www.ncbi.nlm.nih.gov/pubmed/34835724
http://dx.doi.org/10.3390/nano11112960

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8618743/
https://www.ncbi.nlm.nih.gov/pubmed/34835724
http://dx.doi.org/10.3390/nano11112960

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