Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT

A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is fabricated by molecular beam epitaxy (MBE). The force...

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Detalles Bibliográficos
Autores principales: Wang, Rui-Rong, Guo, Hao, Tang, Jun, Liu, Jin-Ping, Liu, Li-Shuang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8619353/
https://www.ncbi.nlm.nih.gov/pubmed/34832824
http://dx.doi.org/10.3390/mi12111413

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8619353/
https://www.ncbi.nlm.nih.gov/pubmed/34832824
http://dx.doi.org/10.3390/mi12111413

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