MoTe(2) Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Due to their extraordinary electrical and physical properties, two-dimensional (2D) transition metal dichalcogenides (TMDs) are considered promising for use in next-generation electrical devices. However, the application of TMD-based devices is limited because of the Schottky barrier interface resul...

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Detalles Bibliográficos
Autores principales: Bae, Geun Yeol, Kim, Jinsung, Kim, Junyoung, Lee, Siyoung, Lee, Eunho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620056/
https://www.ncbi.nlm.nih.gov/pubmed/34835570
http://dx.doi.org/10.3390/nano11112805

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620056/
https://www.ncbi.nlm.nih.gov/pubmed/34835570
http://dx.doi.org/10.3390/nano11112805

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