Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and...

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Detalles Bibliográficos
Autores principales: Echresh, Ahmad, Arora, Himani, Fuchs, Florian, Li, Zichao, Hübner, René, Prucnal, Slawomir, Schuster, Jörg, Zahn, Peter, Helm, Manfred, Zhou, Shengqiang, Erbe, Artur, Rebohle, Lars, Georgiev, Yordan M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620357/
https://www.ncbi.nlm.nih.gov/pubmed/34835681
http://dx.doi.org/10.3390/nano11112917

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620357/
https://www.ncbi.nlm.nih.gov/pubmed/34835681
http://dx.doi.org/10.3390/nano11112917

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