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Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence

The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and...

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Autores principales: Echresh, Ahmad, Arora, Himani, Fuchs, Florian, Li, Zichao, Hübner, René, Prucnal, Slawomir, Schuster, Jörg, Zahn, Peter, Helm, Manfred, Zhou, Shengqiang, Erbe, Artur, Rebohle, Lars, Georgiev, Yordan M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620357/
https://www.ncbi.nlm.nih.gov/pubmed/34835681
http://dx.doi.org/10.3390/nano11112917
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author Echresh, Ahmad
Arora, Himani
Fuchs, Florian
Li, Zichao
Hübner, René
Prucnal, Slawomir
Schuster, Jörg
Zahn, Peter
Helm, Manfred
Zhou, Shengqiang
Erbe, Artur
Rebohle, Lars
Georgiev, Yordan M.
author_facet Echresh, Ahmad
Arora, Himani
Fuchs, Florian
Li, Zichao
Hübner, René
Prucnal, Slawomir
Schuster, Jörg
Zahn, Peter
Helm, Manfred
Zhou, Shengqiang
Erbe, Artur
Rebohle, Lars
Georgiev, Yordan M.
author_sort Echresh, Ahmad
collection PubMed
description The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 [Formula: see text] and [Formula: see text] , respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape.
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spelling pubmed-86203572021-11-27 Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence Echresh, Ahmad Arora, Himani Fuchs, Florian Li, Zichao Hübner, René Prucnal, Slawomir Schuster, Jörg Zahn, Peter Helm, Manfred Zhou, Shengqiang Erbe, Artur Rebohle, Lars Georgiev, Yordan M. Nanomaterials (Basel) Article The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 [Formula: see text] and [Formula: see text] , respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape. MDPI 2021-10-30 /pmc/articles/PMC8620357/ /pubmed/34835681 http://dx.doi.org/10.3390/nano11112917 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Echresh, Ahmad
Arora, Himani
Fuchs, Florian
Li, Zichao
Hübner, René
Prucnal, Slawomir
Schuster, Jörg
Zahn, Peter
Helm, Manfred
Zhou, Shengqiang
Erbe, Artur
Rebohle, Lars
Georgiev, Yordan M.
Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_full Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_fullStr Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_full_unstemmed Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_short Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
title_sort electrical characterization of germanium nanowires using a symmetric hall bar configuration: size and shape dependence
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620357/
https://www.ncbi.nlm.nih.gov/pubmed/34835681
http://dx.doi.org/10.3390/nano11112917
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