SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conductio...

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Detalles Bibliográficos
Autores principales: Deng, Xiaochuan, Liu, Rui, Li, Songjun, Li, Ling, Wu, Hao, Li, Xuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620500/
https://www.ncbi.nlm.nih.gov/pubmed/34832495
http://dx.doi.org/10.3390/ma14227096

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8620500/
https://www.ncbi.nlm.nih.gov/pubmed/34832495
http://dx.doi.org/10.3390/ma14227096

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