High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications

In this study, the deuterium passivation effect of silicon nitride (Si(3)N(4)) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si(3)N(4) as a charge trapping layer, deuterium (D(2)) high pressure annealing (HPA)...

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Detalles Bibliográficos
Autores principales: Sung, Jae-Young, Jeong, Jun-Kyo, Ko, Woon-San, Byun, Jun-Ho, Lee, Hi-Deok, Lee, Ga-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621282/
https://www.ncbi.nlm.nih.gov/pubmed/34832728
http://dx.doi.org/10.3390/mi12111316

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621282/
https://www.ncbi.nlm.nih.gov/pubmed/34832728
http://dx.doi.org/10.3390/mi12111316

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