Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor

The integration of 4 nm thick amorphous indium tungsten oxide (a-IWO) and a hafnium oxide (HfO(2)) high-κ gate dielectric has been demonstrated previously as one of promising amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). In this study, the more positive threshold voltage shift (∆...

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Detalles Bibliográficos
Autores principales: Fan, Wan-Ta, Liu, Po-Tsun, Kuo, Po-Yi, Chang, Chien-Min, Liu, I-Han, Kuo, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621290/
https://www.ncbi.nlm.nih.gov/pubmed/34835834
http://dx.doi.org/10.3390/nano11113070

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621290/
https://www.ncbi.nlm.nih.gov/pubmed/34835834
http://dx.doi.org/10.3390/nano11113070

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