Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to...

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Detalles Bibliográficos
Autores principales: Zhang, Zhe, Wen, Zhidong, Shi, Haiyan, Song, Qi, Xu, Ziye, Li, Man, Hou, Yu, Zhang, Zichen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621418/
https://www.ncbi.nlm.nih.gov/pubmed/34832743
http://dx.doi.org/10.3390/mi12111331

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621418/
https://www.ncbi.nlm.nih.gov/pubmed/34832743
http://dx.doi.org/10.3390/mi12111331

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