Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)

Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integrat...

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Detalles Bibliográficos
Autores principales: Zahoor, Furqan, Hussin, Fawnizu Azmadi, Khanday, Farooq Ahmad, Ahmad, Mohamad Radzi, Mohd Nawi, Illani
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621740/
https://www.ncbi.nlm.nih.gov/pubmed/34832702
http://dx.doi.org/10.3390/mi12111288

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621740/
https://www.ncbi.nlm.nih.gov/pubmed/34832702
http://dx.doi.org/10.3390/mi12111288

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