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Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM)
Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integrat...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621740/ https://www.ncbi.nlm.nih.gov/pubmed/34832702 http://dx.doi.org/10.3390/mi12111288 |
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author | Zahoor, Furqan Hussin, Fawnizu Azmadi Khanday, Farooq Ahmad Ahmad, Mohamad Radzi Mohd Nawi, Illani |
author_facet | Zahoor, Furqan Hussin, Fawnizu Azmadi Khanday, Farooq Ahmad Ahmad, Mohamad Radzi Mohd Nawi, Illani |
author_sort | Zahoor, Furqan |
collection | PubMed |
description | Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integration is considered as a possible technology option. CNTFETs are currently being preferred for implementing ternary circuits due to their desirable multiple threshold voltage and geometry-dependent properties, whereas the RRAM is used due to its multilevel cell capability which enables storage of multiple resistance states within a single cell. This article presents the 2-trit arithmetic logic unit (ALU) design using CNTFETs and RRAM as the design elements. The proposed ALU incorporates a transmission gate block, a function select block, and various ternary function processing modules. The ALU design optimization is achieved by introducing a controlled ternary adder–subtractor module instead of separate adder and subtractor circuits. The simulations are analyzed and validated using Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions (supply voltages) to test the robustness of the designs. The simulation results indicate that the proposed CNTFET-RRAM integration enables the compact circuit realization with good robustness. Moreover, due to the addition of RRAM as circuit element, the proposed ALU has the advantage of non-volatility. |
format | Online Article Text |
id | pubmed-8621740 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-86217402021-11-27 Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Zahoor, Furqan Hussin, Fawnizu Azmadi Khanday, Farooq Ahmad Ahmad, Mohamad Radzi Mohd Nawi, Illani Micromachines (Basel) Article Due to the difficulties associated with scaling of silicon transistors, various technologies beyond binary logic processing are actively being investigated. Ternary logic circuit implementation with carbon nanotube field effect transistors (CNTFETs) and resistive random access memory (RRAM) integration is considered as a possible technology option. CNTFETs are currently being preferred for implementing ternary circuits due to their desirable multiple threshold voltage and geometry-dependent properties, whereas the RRAM is used due to its multilevel cell capability which enables storage of multiple resistance states within a single cell. This article presents the 2-trit arithmetic logic unit (ALU) design using CNTFETs and RRAM as the design elements. The proposed ALU incorporates a transmission gate block, a function select block, and various ternary function processing modules. The ALU design optimization is achieved by introducing a controlled ternary adder–subtractor module instead of separate adder and subtractor circuits. The simulations are analyzed and validated using Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions (supply voltages) to test the robustness of the designs. The simulation results indicate that the proposed CNTFET-RRAM integration enables the compact circuit realization with good robustness. Moreover, due to the addition of RRAM as circuit element, the proposed ALU has the advantage of non-volatility. MDPI 2021-10-21 /pmc/articles/PMC8621740/ /pubmed/34832702 http://dx.doi.org/10.3390/mi12111288 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Zahoor, Furqan Hussin, Fawnizu Azmadi Khanday, Farooq Ahmad Ahmad, Mohamad Radzi Mohd Nawi, Illani Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) |
title | Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) |
title_full | Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) |
title_fullStr | Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) |
title_full_unstemmed | Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) |
title_short | Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) |
title_sort | ternary arithmetic logic unit design utilizing carbon nanotube field effect transistor (cntfet) and resistive random access memory (rram) |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8621740/ https://www.ncbi.nlm.nih.gov/pubmed/34832702 http://dx.doi.org/10.3390/mi12111288 |
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