Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT

In this paper, an AIGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) device is realized. The device shows normal ON characteristics with a maximum current of 570 mA/mm at a gate-to-source voltage of 3 V, an on-state resistance of 7.3 Ω·mm and breakdown voltage of 500 V....

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Detalles Bibliográficos
Autores principales: Khediri, Abdelkrim, Talbi, Abbasia, Jaouad, Abdelatif, Maher, Hassan, Soltani, Ali
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622694/
https://www.ncbi.nlm.nih.gov/pubmed/34832696
http://dx.doi.org/10.3390/mi12111284

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8622694/
https://www.ncbi.nlm.nih.gov/pubmed/34832696
http://dx.doi.org/10.3390/mi12111284

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