Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal c...

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Detalles Bibliográficos
Autores principales: Huang, Chong-Rong, Chiu, Hsien-Chin, Liu, Chia-Hao, Wang, Hsiang-Chun, Kao, Hsuan-Ling, Chen, Chih-Tien, Chang, Kuo-Jen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623141/
https://www.ncbi.nlm.nih.gov/pubmed/34832077
http://dx.doi.org/10.3390/membranes11110848

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623141/
https://www.ncbi.nlm.nih.gov/pubmed/34832077
http://dx.doi.org/10.3390/membranes11110848

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