Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range o...

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Detalles Bibliográficos
Autores principales: Li, Jianfei, Chen, Duo, Li, Kuilong, Wang, Qiang, Shi, Mengyao, Diao, Dejie, Cheng, Chen, Li, Changfu, Leng, Jiancai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623255/
https://www.ncbi.nlm.nih.gov/pubmed/34835898
http://dx.doi.org/10.3390/nano11113134

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623255/
https://www.ncbi.nlm.nih.gov/pubmed/34835898
http://dx.doi.org/10.3390/nano11113134

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