Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range o...

Descripción completa

Detalles Bibliográficos
Autores principales: Li, Jianfei, Chen, Duo, Li, Kuilong, Wang, Qiang, Shi, Mengyao, Diao, Dejie, Cheng, Chen, Li, Changfu, Leng, Jiancai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623255/
https://www.ncbi.nlm.nih.gov/pubmed/34835898
http://dx.doi.org/10.3390/nano11113134
_version_ 1784605888787513344
author Li, Jianfei
Chen, Duo
Li, Kuilong
Wang, Qiang
Shi, Mengyao
Diao, Dejie
Cheng, Chen
Li, Changfu
Leng, Jiancai
author_facet Li, Jianfei
Chen, Duo
Li, Kuilong
Wang, Qiang
Shi, Mengyao
Diao, Dejie
Cheng, Chen
Li, Changfu
Leng, Jiancai
author_sort Li, Jianfei
collection PubMed
description GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range of 6–300 K and injection current range of 0.01–350 mA. Based on the results, we suggest that a 20 nm-thick LT p-GaN layer can effectively prevent indium (In) re-evaporation, improve the quantum-confined Stark effect in the last quantum well (QW) of the active region, and finally reduce the efficiency droop by about 7%.
format Online
Article
Text
id pubmed-8623255
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-86232552021-11-27 Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer Li, Jianfei Chen, Duo Li, Kuilong Wang, Qiang Shi, Mengyao Diao, Dejie Cheng, Chen Li, Changfu Leng, Jiancai Nanomaterials (Basel) Article GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range of 6–300 K and injection current range of 0.01–350 mA. Based on the results, we suggest that a 20 nm-thick LT p-GaN layer can effectively prevent indium (In) re-evaporation, improve the quantum-confined Stark effect in the last quantum well (QW) of the active region, and finally reduce the efficiency droop by about 7%. MDPI 2021-11-20 /pmc/articles/PMC8623255/ /pubmed/34835898 http://dx.doi.org/10.3390/nano11113134 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Li, Jianfei
Chen, Duo
Li, Kuilong
Wang, Qiang
Shi, Mengyao
Diao, Dejie
Cheng, Chen
Li, Changfu
Leng, Jiancai
Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_full Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_fullStr Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_full_unstemmed Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_short Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
title_sort optical properties of gan-based green light-emitting diodes influenced by low-temperature p-gan layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623255/
https://www.ncbi.nlm.nih.gov/pubmed/34835898
http://dx.doi.org/10.3390/nano11113134
work_keys_str_mv AT lijianfei opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT chenduo opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT likuilong opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT wangqiang opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT shimengyao opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT diaodejie opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT chengchen opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT lichangfu opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer
AT lengjiancai opticalpropertiesofganbasedgreenlightemittingdiodesinfluencedbylowtemperaturepganlayer

Ejemplares similares