Cargando…

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range o...

Descripción completa

Detalles Bibliográficos
Autores principales:	Li, Jianfei, Chen, Duo, Li, Kuilong, Wang, Qiang, Shi, Mengyao, Diao, Dejie, Cheng, Chen, Li, Changfu, Leng, Jiancai
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623255/ https://www.ncbi.nlm.nih.gov/pubmed/34835898 http://dx.doi.org/10.3390/nano11113134

Ejemplares similares

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors
por: Shiu, Guo-Yi, et al.
Publicado: (2016)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
por: Robin, Y., et al.
Publicado: (2018)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
por: Lee, Moonsang, et al.
Publicado: (2018)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
por: Chen, Wen, et al.
Publicado: (2021)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
por: Chen, Shuo-Wei, et al.
Publicado: (2017)

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen
por: Sousa, Marco A., et al.
Publicado: (2015)

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
por: Piprek, Joachim
Publicado: (2020)

Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
por: Nee, Tzer-En, et al.
Publicado: (2021)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes
por: Lei, Po-Hsun, et al.
Publicado: (2021)

Impact of Plasma Electron Flux on Plasma Damage‐Free Sputtering of Ultrathin Tin‐Doped Indium Oxide Contact Layer on p‐GaN for InGaN/GaN Light‐Emitting Diodes
por: Son, Kwang Jeong, et al.
Publicado: (2017)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
por: Tsai, Ming-Ta, et al.
Publicado: (2014)

A Novel Bidirectional AlGaN/GaN ESD Protection Diode
por: Yao, Bin, et al.
Publicado: (2022)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021)

Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates
por: Dvoretckaia, Liliia, et al.
Publicado: (2022)

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface
por: Nishio, Kengo, et al.
Publicado: (2018)

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes
por: Wang, Yanli, et al.
Publicado: (2020)

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
por: Liu, Fang, et al.
Publicado: (2020)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer
por: Zhou, Quanbin, et al.
Publicado: (2018)

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
por: Fragkos, Ioannis E., et al.
Publicado: (2017)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
por: Jorudas, Justinas, et al.
Publicado: (2020)

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
por: Xu, Peiqiang, et al.
Publicado: (2012)

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing
por: Lai, Fang-I, et al.
Publicado: (2013)

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
por: Chao, Szu-Han, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_j8ncu7pta3jsu1bdneqqpo692n