A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off...

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Detalles Bibliográficos
Autores principales: Sheu, Gene, Song, Yu-Lin, Susmitha, Dupati, Issac, Kutagulla, Mogarala, Ramyasri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623484/
https://www.ncbi.nlm.nih.gov/pubmed/34832128
http://dx.doi.org/10.3390/membranes11110899

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623484/
https://www.ncbi.nlm.nih.gov/pubmed/34832128
http://dx.doi.org/10.3390/membranes11110899

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