Cargando…

A Novel Nitrogen Ion Implantation Technique for Turning Thin Film “Normally On” AlGaN/GaN Transistor into “Normally Off” Using TCAD Simulation

This study presents an innovative, low-cost, mass-manufacturable ion implantation technique for converting thin film normally on AlGaN/GaN devices into normally off ones. Through TCAD (Technology Computer-Aided Design) simulations, we converted a calibrated normally on transistor into a normally off...

Descripción completa

Detalles Bibliográficos
Autores principales:	Sheu, Gene, Song, Yu-Lin, Susmitha, Dupati, Issac, Kutagulla, Mogarala, Ramyasri
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623484/ https://www.ncbi.nlm.nih.gov/pubmed/34832128 http://dx.doi.org/10.3390/membranes11110899

Ejemplares similares

Breakdown Behavior of Metal Contact Positions in GaN HEMT with Nitrogen-Implanted Gate Using TCAD Simulation
por: Sheu, Gene, et al.
Publicado: (2022)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
por: Song, Yu-Lin, et al.
Publicado: (2021)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
por: Wojtasiak, Wojciech, et al.
Publicado: (2018)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
por: Xia, Xiaoyu, et al.
Publicado: (2021)

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application
por: Zhang, Penghao, et al.
Publicado: (2022)

The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
por: Podlipskas, Žydrūnas, et al.
Publicado: (2019)

AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study
por: Huang, Chih-Cheng, et al.
Publicado: (2013)

Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor
por: Mallem, Siva Pratap Reddy, et al.
Publicado: (2023)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor
por: Esendag, Volkan, et al.
Publicado: (2022)

Formation of quantum dots in GaN/AlGaN FETs
por: Otsuka, Tomohiro, et al.
Publicado: (2020)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
por: Li, Liuan, et al.
Publicado: (2014)

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein
por: Lee, Hee Ho, et al.
Publicado: (2015)

Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors
por: Cui, Peng, et al.
Publicado: (2018)

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
por: Besendörfer, Sven, et al.
Publicado: (2020)

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor
por: Meng, Qingzhi, et al.
Publicado: (2021)

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology
por: Liu, Yang, et al.
Publicado: (2021)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
por: Bayram, Ferhat, et al.
Publicado: (2020)

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
por: Zhang, Hanyuan, et al.
Publicado: (2020)

Optimization AlGaN/GaN HEMT with Field Plate Structures
por: Shi, Ningping, et al.
Publicado: (2022)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
por: Abid, Idriss, et al.
Publicado: (2019)

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al(2)O(3)/AlN Composite Gate Insulator
por: Chiu, Hsien-Chin, et al.
Publicado: (2021)

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
por: Huang, Yu-Chun, et al.
Publicado: (2021)

Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors
por: Lin, Yu-Shyan, et al.
Publicado: (2020)

Two‐Dimensional Perovskite‐Gated AlGaN/GaN High‐Electron‐Mobility‐Transistor for Neuromorphic Vision Sensor
por: Hong, Xitong, et al.
Publicado: (2022)

Detection of HER-3 with an AlGaN/GaN-Based Ion-Sensitive Heterostructure Field Effect Transistor Biosensor
por: Wang, Fengge, et al.
Publicado: (2023)

High Temperature AlGaN/GaN Membrane Based Pressure Sensors
por: Gajula, Durga, et al.
Publicado: (2018)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Graphene as a Schottky Barrier Contact to AlGaN/GaN Heterostructures
por: Dub, Maksym, et al.
Publicado: (2020)

A Novel Bidirectional AlGaN/GaN ESD Protection Diode
por: Yao, Bin, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_gu29v0t8madhggcafb6l4dn8k7