Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and br...

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Detalles Bibliográficos
Autores principales: Kim, Ki Yeong, Noh, Joo Seok, Yoon, Tae Young, Kim, Jang Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623645/
https://www.ncbi.nlm.nih.gov/pubmed/34832833
http://dx.doi.org/10.3390/mi12111422

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623645/
https://www.ncbi.nlm.nih.gov/pubmed/34832833
http://dx.doi.org/10.3390/mi12111422

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