Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction

The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O(2), exhibited p-type doping behavior, whereas those exposed in...

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Detalles Bibliográficos
Autores principales: Ali, Asif, Kim, So-Young, Hussain, Muhammad, Jaffery, Syed Hassan Abbas, Dastgeer, Ghulam, Hussain, Sajjad, Anh, Bach Thi Phuong, Eom, Jonghwa, Lee, Byoung Hun, Jung, Jongwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623685/
https://www.ncbi.nlm.nih.gov/pubmed/34835767
http://dx.doi.org/10.3390/nano11113003

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8623685/
https://www.ncbi.nlm.nih.gov/pubmed/34835767
http://dx.doi.org/10.3390/nano11113003

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