Ga(2)O(3)(Sn) Oxides for High-Temperature Gas Sensors

Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga(2)O(3) with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, adsorption sites, donor centers and, as a r...

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Detalles Bibliográficos
Autores principales: Vorobyeva, Nataliya, Rumyantseva, Marina, Platonov, Vadim, Filatova, Darya, Chizhov, Artem, Marikutsa, Artem, Bozhev, Ivan, Gaskov, Alexander
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624813/
https://www.ncbi.nlm.nih.gov/pubmed/34835702
http://dx.doi.org/10.3390/nano11112938

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624813/
https://www.ncbi.nlm.nih.gov/pubmed/34835702
http://dx.doi.org/10.3390/nano11112938

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