Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer as the Gate Insulator

In this study, we proposed using the high-K polyvinyl alcohol (PVA)/low-K poly-4-vinylphenol (PVP) bilayer structure as the gate insulator to improve the performance of a pentacene-based organic thin-film transistor. The dielectric constant of the optimal high-K PVA/low-K PVP bilayer was 5.6, which...

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Detalles Bibliográficos
Autores principales: Fan, Ching-Lin, Tsao, Hou-Yen, Shiah, Yu-Shien, Yao, Che-Wei, Cheng, Po-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624863/
https://www.ncbi.nlm.nih.gov/pubmed/34833241
http://dx.doi.org/10.3390/polym13223941

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624863/
https://www.ncbi.nlm.nih.gov/pubmed/34833241
http://dx.doi.org/10.3390/polym13223941

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