Physical and Electrical Analysis of Poly-Si Channel Effect on SONOS Flash Memory

In this study, polycrystalline silicon (poly-Si) is applied to silicon-oxide-nitride-oxide-silicon (SONOS) flash memory as a channel material and the physical and electrical characteristics are analyzed. The results show that the surface roughness of silicon nitride as charge trapping layer (CTL) is...

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Detalles Bibliográficos
Autores principales: Jeong, Jun-Kyo, Sung, Jae-Young, Ko, Woon-San, Nam, Ki-Ryung, Lee, Hi-Deok, Lee, Ga-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624876/
https://www.ncbi.nlm.nih.gov/pubmed/34832812
http://dx.doi.org/10.3390/mi12111401

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8624876/
https://www.ncbi.nlm.nih.gov/pubmed/34832812
http://dx.doi.org/10.3390/mi12111401

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