Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric

In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiN(x)) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated in detail. The mechanism of the high-performance...

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Detalles Bibliográficos
Autores principales: Liu, Yiming, Liu, Chang, Qin, Houyun, Peng, Chong, Lu, Mingxin, Chen, Zhanguo, Zhao, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8625031/
https://www.ncbi.nlm.nih.gov/pubmed/34832130
http://dx.doi.org/10.3390/membranes11110902

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8625031/
https://www.ncbi.nlm.nih.gov/pubmed/34832130
http://dx.doi.org/10.3390/membranes11110902

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