Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable pro...

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Detalles Bibliográficos
Autores principales: Lee, Hoontaek, Kim, Junsoo, Shin, Kumjae, Moon, Wonkyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8625200/
https://www.ncbi.nlm.nih.gov/pubmed/34832715
http://dx.doi.org/10.3390/mi12111303

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8625200/
https://www.ncbi.nlm.nih.gov/pubmed/34832715
http://dx.doi.org/10.3390/mi12111303

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