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Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing
We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable pro...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8625200/ https://www.ncbi.nlm.nih.gov/pubmed/34832715 http://dx.doi.org/10.3390/mi12111303 |