Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors

Detalles Bibliográficos
Autores principales: Amir, Walid, Shin, Ju‑Won, Shin, Ki‑Yong, Kim, Jae‑Moo, Cho, Chu‑Young, Park, Kyung‑Ho, Hoshi, Takuya, Tsutsumi, Takuya, Sugiyama, Hiroki, Matsuzaki, Hideaki, Kim, Tae‑Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Author Correction
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8640010/
https://www.ncbi.nlm.nih.gov/pubmed/34857865
http://dx.doi.org/10.1038/s41598-021-02854-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8640010/
https://www.ncbi.nlm.nih.gov/pubmed/34857865
http://dx.doi.org/10.1038/s41598-021-02854-3

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