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Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors
| Autores principales: | , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8640010/ https://www.ncbi.nlm.nih.gov/pubmed/34857865 http://dx.doi.org/10.1038/s41598-021-02854-3 |
| _version_ | 1784609245159751680 |
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| author | Amir, Walid Shin, Ju‑Won Shin, Ki‑Yong Kim, Jae‑Moo Cho, Chu‑Young Park, Kyung‑Ho Hoshi, Takuya Tsutsumi, Takuya Sugiyama, Hiroki Matsuzaki, Hideaki Kim, Tae‑Woo |
| author_facet | Amir, Walid Shin, Ju‑Won Shin, Ki‑Yong Kim, Jae‑Moo Cho, Chu‑Young Park, Kyung‑Ho Hoshi, Takuya Tsutsumi, Takuya Sugiyama, Hiroki Matsuzaki, Hideaki Kim, Tae‑Woo |
| author_sort | Amir, Walid |
| collection | PubMed |
| description | |
| format | Online Article Text |
| id | pubmed-8640010 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2021 |
| publisher | Nature Publishing Group UK |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-86400102021-12-06 Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors Amir, Walid Shin, Ju‑Won Shin, Ki‑Yong Kim, Jae‑Moo Cho, Chu‑Young Park, Kyung‑Ho Hoshi, Takuya Tsutsumi, Takuya Sugiyama, Hiroki Matsuzaki, Hideaki Kim, Tae‑Woo Sci Rep Author Correction Nature Publishing Group UK 2021-12-02 /pmc/articles/PMC8640010/ /pubmed/34857865 http://dx.doi.org/10.1038/s41598-021-02854-3 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
| spellingShingle | Author Correction Amir, Walid Shin, Ju‑Won Shin, Ki‑Yong Kim, Jae‑Moo Cho, Chu‑Young Park, Kyung‑Ho Hoshi, Takuya Tsutsumi, Takuya Sugiyama, Hiroki Matsuzaki, Hideaki Kim, Tae‑Woo Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors |
| title | Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors |
| title_full | Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors |
| title_fullStr | Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors |
| title_full_unstemmed | Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors |
| title_short | Author Correction: A quantitative approach for trap analysis between Al(0.25)Ga(0.75)N and GaN in high electron mobility transistors |
| title_sort | author correction: a quantitative approach for trap analysis between al(0.25)ga(0.75)n and gan in high electron mobility transistors |
| topic | Author Correction |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8640010/ https://www.ncbi.nlm.nih.gov/pubmed/34857865 http://dx.doi.org/10.1038/s41598-021-02854-3 |
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