Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation

Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He(+) ion irradiation: converting n-type MoS(2) to p-type by electron capture through the migra...

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Detalles Bibliográficos
Autores principales: Han, Sang Wook, Yun, Won Seok, Kim, Hyesun, Kim, Yanghee, Kim, D.-H., Ahn, Chang Won, Ryu, Sunmin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8654839/
https://www.ncbi.nlm.nih.gov/pubmed/34880289
http://dx.doi.org/10.1038/s41598-021-02932-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8654839/
https://www.ncbi.nlm.nih.gov/pubmed/34880289
http://dx.doi.org/10.1038/s41598-021-02932-6

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