Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation

Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He(+) ion irradiation: converting n-type MoS(2) to p-type by electron capture through the migra...

Descripción completa

Detalles Bibliográficos
Autores principales: Han, Sang Wook, Yun, Won Seok, Kim, Hyesun, Kim, Yanghee, Kim, D.-H., Ahn, Chang Won, Ryu, Sunmin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8654839/
https://www.ncbi.nlm.nih.gov/pubmed/34880289
http://dx.doi.org/10.1038/s41598-021-02932-6
_version_ 1784611951427452928
author Han, Sang Wook
Yun, Won Seok
Kim, Hyesun
Kim, Yanghee
Kim, D.-H.
Ahn, Chang Won
Ryu, Sunmin
author_facet Han, Sang Wook
Yun, Won Seok
Kim, Hyesun
Kim, Yanghee
Kim, D.-H.
Ahn, Chang Won
Ryu, Sunmin
author_sort Han, Sang Wook
collection PubMed
description Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He(+) ion irradiation: converting n-type MoS(2) to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He(+) ion irradiation is valid for supported bilayer MoS(2); however, it is limited at supported monolayer MoS(2) because the charges on the underlying substrates transfer into the monolayer under the current condition for He(+) ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He(+) ion irradiation.
format Online
Article
Text
id pubmed-8654839
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-86548392021-12-09 Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation Han, Sang Wook Yun, Won Seok Kim, Hyesun Kim, Yanghee Kim, D.-H. Ahn, Chang Won Ryu, Sunmin Sci Rep Article Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He(+) ion irradiation: converting n-type MoS(2) to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He(+) ion irradiation is valid for supported bilayer MoS(2); however, it is limited at supported monolayer MoS(2) because the charges on the underlying substrates transfer into the monolayer under the current condition for He(+) ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He(+) ion irradiation. Nature Publishing Group UK 2021-12-08 /pmc/articles/PMC8654839/ /pubmed/34880289 http://dx.doi.org/10.1038/s41598-021-02932-6 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Han, Sang Wook
Yun, Won Seok
Kim, Hyesun
Kim, Yanghee
Kim, D.-H.
Ahn, Chang Won
Ryu, Sunmin
Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation
title Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation
title_full Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation
title_fullStr Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation
title_full_unstemmed Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation
title_short Hole doping effect of MoS(2) via electron capture of He(+) ion irradiation
title_sort hole doping effect of mos(2) via electron capture of he(+) ion irradiation
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8654839/
https://www.ncbi.nlm.nih.gov/pubmed/34880289
http://dx.doi.org/10.1038/s41598-021-02932-6
work_keys_str_mv AT hansangwook holedopingeffectofmos2viaelectroncaptureofheionirradiation
AT yunwonseok holedopingeffectofmos2viaelectroncaptureofheionirradiation
AT kimhyesun holedopingeffectofmos2viaelectroncaptureofheionirradiation
AT kimyanghee holedopingeffectofmos2viaelectroncaptureofheionirradiation
AT kimdh holedopingeffectofmos2viaelectroncaptureofheionirradiation
AT ahnchangwon holedopingeffectofmos2viaelectroncaptureofheionirradiation
AT ryusunmin holedopingeffectofmos2viaelectroncaptureofheionirradiation

Ejemplares similares