Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry

Gallium nitride (GaN) doped with germanium at a level of 10(20) cm(−3) is proposed as a viable material for cladding layers in blue- and green-emitting laser diodes. Spectral reflectometry and ellipsometry are used to provide evidence of a reduced index of refraction in such layers. The refractive-i...

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Detalles Bibliográficos
Autores principales: Schiavon, Dario, Mroczyński, Robert, Kafar, Anna, Kamler, Grzegorz, Levchenko, Iryna, Najda, Stephen, Perlin, Piotr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8658365/
https://www.ncbi.nlm.nih.gov/pubmed/34885522
http://dx.doi.org/10.3390/ma14237364

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8658365/
https://www.ncbi.nlm.nih.gov/pubmed/34885522
http://dx.doi.org/10.3390/ma14237364

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