Microstructures of HfO(x) Films Prepared via Atomic Layer Deposition Using La(NO(3))(3)·6H(2)O Oxidants

Hafnium oxide (HfO(x)) films have a wide range of applications in solid-state devices, including metal–oxide–semiconductor field-effect transistors (MOSFETs). The growth of HfO(x) films from the metal precursor tetrakis(ethylmethylamino) hafnium with La(NO(3))(3)·6H(2)O solution (LNS) as an oxidant...

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Detalles Bibliográficos
Autores principales: Kim, Seon Yong, Jung, Yong Chan, Seong, Sejong, Lee, Taehoon, Park, In-Sung, Ahn, Jinho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8659129/
https://www.ncbi.nlm.nih.gov/pubmed/34885632
http://dx.doi.org/10.3390/ma14237478

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8659129/
https://www.ncbi.nlm.nih.gov/pubmed/34885632
http://dx.doi.org/10.3390/ma14237478

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