Electroresistance in multipolar antiferroelectric Cu(2)Se semiconductor

Electric field-induced changes in the electrical resistance of a material are considered essential and enabling processes for future efficient large-scale computations. However, the underlying physical mechanisms of electroresistance are currently remain largely unknown. Herein, an electrically reve...

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Detalles Bibliográficos
Autores principales: Bai, Hui, Wu, Jinsong, Su, Xianli, Peng, Haoyang, Li, Zhi, Yang, Dongwang, Zhang, Qingjie, Uher, Ctirad, Tang, Xinfeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8664818/
https://www.ncbi.nlm.nih.gov/pubmed/34893623
http://dx.doi.org/10.1038/s41467-021-27531-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8664818/
https://www.ncbi.nlm.nih.gov/pubmed/34893623
http://dx.doi.org/10.1038/s41467-021-27531-x

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