Evolution of the conductive filament system in HfO(2)-based memristors observed by direct atomic-scale imaging

The resistive switching effect in memristors typically stems from the formation and rupture of localized conductive filament paths, and HfO(2) has been accepted as one of the most promising resistive switching materials. However, the dynamic changes in the resistive switching process, including the...

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Detalles Bibliográficos
Autores principales: Zhang, Ying, Mao, Ge-Qi, Zhao, Xiaolong, Li, Yu, Zhang, Meiyun, Wu, Zuheng, Wu, Wei, Sun, Huajun, Guo, Yizhong, Wang, Lihua, Zhang, Xumeng, Liu, Qi, Lv, Hangbing, Xue, Kan-Hao, Xu, Guangwei, Miao, Xiangshui, Long, Shibing, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8668918/
https://www.ncbi.nlm.nih.gov/pubmed/34903752
http://dx.doi.org/10.1038/s41467-021-27575-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8668918/
https://www.ncbi.nlm.nih.gov/pubmed/34903752
http://dx.doi.org/10.1038/s41467-021-27575-z

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