Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions

Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their resistance switching mechanisms are phenomenally postulated as the modulation of carrier transport by polariz...

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Detalles Bibliográficos
Autores principales: Xue, Fei, He, Xin, Ma, Yinchang, Zheng, Dongxing, Zhang, Chenhui, Li, Lain-Jong, He, Jr-Hau, Yu, Bin, Zhang, Xixiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8674284/
https://www.ncbi.nlm.nih.gov/pubmed/34911970
http://dx.doi.org/10.1038/s41467-021-27617-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8674284/
https://www.ncbi.nlm.nih.gov/pubmed/34911970
http://dx.doi.org/10.1038/s41467-021-27617-6

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