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Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions
Ferroelectric memristors have found extensive applications as a type of nonvolatile resistance switching memories in information storage, neuromorphic computing, and image recognition. Their resistance switching mechanisms are phenomenally postulated as the modulation of carrier transport by polariz...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8674284/ https://www.ncbi.nlm.nih.gov/pubmed/34911970 http://dx.doi.org/10.1038/s41467-021-27617-6 |