Gate‐Tunable Magnetism via Resonant Se‐Vacancy Levels in WSe(2)

The confined defects in 2D van der Waals (vdW)‐layered semiconductors can be easily tailored using charge doping, strain, or an electric field. Nevertheless, gate‐tunable magnetic order via intrinsic defects has been rarely observed to date. Herein, a gate‐tunable magnetic order via resonant Se vaca...

Descripción completa

Detalles Bibliográficos
Autores principales: Nguyen, Tuan Dung, Jiang, Jinbao, Song, Bumsub, Tran, Minh Dao, Choi, Wooseon, Kim, Ji Hee, Kim, Young‐Min, Duong, Dinh Loc, Lee, Young Hee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2021
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693072/
https://www.ncbi.nlm.nih.gov/pubmed/34713632
http://dx.doi.org/10.1002/advs.202102911

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693072/
https://www.ncbi.nlm.nih.gov/pubmed/34713632
http://dx.doi.org/10.1002/advs.202102911

Ejemplares similares