Atomic layer deposition of dielectric Y(2)O(3) thin films from a homoleptic yttrium formamidinate precursor and water

We report the application of tris(N,N′-diisopropyl-formamidinato)yttrium(iii) [Y(DPfAMD)(3)] as a promising precursor in a water-assisted thermal atomic layer deposition (ALD) process for the fabrication of high quality Y(2)O(3) thin films in a wide temperature range of 150 °C to 325 °C. This precur...

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Detalles Bibliográficos
Autores principales: Boysen, Nils, Zanders, David, Berning, Thomas, Beer, Sebastian M. J., Rogalla, Detlef, Bock, Claudia, Devi, Anjana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693876/
https://www.ncbi.nlm.nih.gov/pubmed/35424225
http://dx.doi.org/10.1039/d0ra09876k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693876/
https://www.ncbi.nlm.nih.gov/pubmed/35424225
http://dx.doi.org/10.1039/d0ra09876k

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