Cargando…
Atomic layer deposition of dielectric Y(2)O(3) thin films from a homoleptic yttrium formamidinate precursor and water
We report the application of tris(N,N′-diisopropyl-formamidinato)yttrium(iii) [Y(DPfAMD)(3)] as a promising precursor in a water-assisted thermal atomic layer deposition (ALD) process for the fabrication of high quality Y(2)O(3) thin films in a wide temperature range of 150 °C to 325 °C. This precur...
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693876/ https://www.ncbi.nlm.nih.gov/pubmed/35424225 http://dx.doi.org/10.1039/d0ra09876k |