Momentum-resolved electronic structure and band offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

The electronic structure of heterointerfaces is a pivotal factor for their device functionality. We use soft x-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures on both sides of the Schottky heterointerface formed by epitaxial films of...

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Detalles Bibliográficos
Autores principales: Yu, Tianlun, Wright, John, Khalsa, Guru, Pamuk, Betül, Chang, Celesta S., Matveyev, Yury, Wang, Xiaoqiang, Schmitt, Thorsten, Feng, Donglai, Muller, David A., Xing, Huili Grace, Jena, Debdeep, Strocov, Vladimir N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8694612/
https://www.ncbi.nlm.nih.gov/pubmed/34936435
http://dx.doi.org/10.1126/sciadv.abi5833

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8694612/
https://www.ncbi.nlm.nih.gov/pubmed/34936435
http://dx.doi.org/10.1126/sciadv.abi5833

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