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AlN PEALD with TMA and forming gas: study of plasma reaction mechanisms
The effect of deposition temperature and plasma dose on plasma-enhanced atomic layer deposition (PEALD) of AlN thin films with forming gas plasma and trimethylaluminum (TMA) has been studied. The temperature has a strong effect on TMA absorption considering the d-TMA absorptions at low deposition te...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697165/ https://www.ncbi.nlm.nih.gov/pubmed/35423742 http://dx.doi.org/10.1039/d0ra05134a |