Thickness-Dependent Structural and Electrical Properties of WS(2) Nanosheets Obtained via the ALD-Grown WO(3) Sulfurization Technique as a Channel Material for Field-Effect Transistors

[Image: see text] Ultrathin WS(2) films are promising functional materials for electronic and optoelectronic devices. Therefore, their synthesis over a large area, allowing control over their thickness and structure, is an essential task. In this work, we investigated the influence of atomic layer d...

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Detalles Bibliográficos
Autores principales: Romanov, Roman I., Kozodaev, Maxim G., Chernikova, Anna G., Zabrosaev, Ivan V., Chouprik, Anastasia A., Zarubin, Sergey S., Novikov, Sergey M., Volkov, Valentyn S., Markeev, Andrey M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697369/
https://www.ncbi.nlm.nih.gov/pubmed/34963928
http://dx.doi.org/10.1021/acsomega.1c04532

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697369/
https://www.ncbi.nlm.nih.gov/pubmed/34963928
http://dx.doi.org/10.1021/acsomega.1c04532

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