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Thickness-Dependent Structural and Electrical Properties of WS(2) Nanosheets Obtained via the ALD-Grown WO(3) Sulfurization Technique as a Channel Material for Field-Effect Transistors
[Image: see text] Ultrathin WS(2) films are promising functional materials for electronic and optoelectronic devices. Therefore, their synthesis over a large area, allowing control over their thickness and structure, is an essential task. In this work, we investigated the influence of atomic layer d...
Autores principales: | Romanov, Roman I., Kozodaev, Maxim G., Chernikova, Anna G., Zabrosaev, Ivan V., Chouprik, Anastasia A., Zarubin, Sergey S., Novikov, Sergey M., Volkov, Valentyn S., Markeev, Andrey M. |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2021
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697369/ https://www.ncbi.nlm.nih.gov/pubmed/34963928 http://dx.doi.org/10.1021/acsomega.1c04532 |
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