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Effect of Al(2)O(3) Passive Layer on Stability and Doping of MoS(2) Field-Effect Transistor (FET) Biosensors
Molybdenum disulfide (MoS(2)) features a band gap of 1.3 eV (indirect) to 1.9 eV (direct). This tunable band gap renders MoS(2) a suitable conducting channel for field-effect transistors (FETs). In addition, the highly sensitive surface potential in MoS(2) layers allows the feasibility of FET applic...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8699215/ https://www.ncbi.nlm.nih.gov/pubmed/34940270 http://dx.doi.org/10.3390/bios11120514 |