Effect of Al(2)O(3) Passive Layer on Stability and Doping of MoS(2) Field-Effect Transistor (FET) Biosensors

Molybdenum disulfide (MoS(2)) features a band gap of 1.3 eV (indirect) to 1.9 eV (direct). This tunable band gap renders MoS(2) a suitable conducting channel for field-effect transistors (FETs). In addition, the highly sensitive surface potential in MoS(2) layers allows the feasibility of FET applic...

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Detalles Bibliográficos
Autores principales: Pham, Tung, Chen, Ying, Lopez, Jhoann, Yang, Mei, Tran, Thien-Toan, Mulchandani, Ashok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8699215/
https://www.ncbi.nlm.nih.gov/pubmed/34940270
http://dx.doi.org/10.3390/bios11120514

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8699215/
https://www.ncbi.nlm.nih.gov/pubmed/34940270
http://dx.doi.org/10.3390/bios11120514

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